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 PMC
FEATURES
Single Power Supply Operation - Low voltage range: 4.5 V - 5.5 V * Memory Organization - PM39F010: 128K x 8 (1 Mbit) - Pm39F020: 256K x 8 (2 Mbit) - Pm39F040: 512K x 8 (4 Mbit) * High Performance Read - 55/70 ns access time * Cost Effective Sector/Block Architecture - Uniform 4 Kbyte sectors - Uniform 64 Kbyte blocks (sector-group) * Data# Polling and Toggle Bit Features * Hardware Data Protection
PM39F010 / Pm39F020 / Pm39F040
1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory
* Automatic Erase and Byte Program - Typical 16 s/byte programming time - Typical 55 ms sector/block/chip erase time * Low Power Consumption - Typical 8 mA active read current - Typical 9 mA program/erase current - Typical 0.5 A CMOS standby current * High Product Endurance - Guarantee 100,000 program/erase cycles per single sector (preliminary) - Minimum 20 years data retention * Industrial Standard Pin-out and Packaging - 32-pin Plastic DIP - 32-pin PLCC - 32-pin VSOP (TSOP 8mm x 14mm) - Optional lead-free (Pb-free) packages
GENERAL DESCRIPTION
The PM39F010/020/040 are 1 Mbit/2 Mbit/4 Mbit 5.0 Volt-only Flash Memories. These devices are designed to use a single low voltage, range from 4.5 Volt to 5.5 Volt, power supply to perform read, erase and program operations. The 12.0 Volt VPP power supply for program and erase operations are not required. The devices can be programmed in standard EPROM programmers as well. The memory arrays of PM39F010/020/040 are divided into uniform 4 Kbyte sectors or uniform 64 Kbyte blocks (sector group - consists of sixteen adjacent sectors). The sector or block erase feature allows users to flexibly erase an memory area as small as 4 Kbyte or as large as 64 Kbyte by one single erase operation without affecting the data in others. The chip erase feature allows the whole memory array to be erased in one single erase operation. The devices can be programmed on a byte-by-byte basis after performing the erase operation. The devices have a standard microprocessor interface as well as a JEDEC standard pin-out/command set. The program operation is executed by issuing the program command code into command register. The internal control logic automatically handles the programming voltage ramp-up and timing. The erase operation is executed by issuing the chip erase, block, or sector erase command code into command register. The internal control logic automatically handles the erase voltage ramp-up and timing. The preprogramming on the array which has not been programmed is not required before an erase operation. The devices offer Data# Polling and Toggle Bit functions, the progress or completion of program and erase operations can be detected by reading the Data# Polling on I/O7 or the Toggle Bit on I/O6. The PM39F010/020/040 are manufactured on PMC's advanced nonvolatile CMOS technology, P-FLASHTM. The devices are offered in 32-pin PDIP, PLCC and VSOP packages with access time of 55 and 70 ns.
Programmable Microelectronics Corp.
1
Issue Date: March 2004, Rev:1.3
PMC
CONNECTION DIAGRAMS
PM39F010 / Pm39F020 / Pm39F040
39F040
WE# WE# WE#
A12
A15
A16
A18
39F020
VCC
A12
A15
A16
39F010
A12
A15
A16
NC
VCC
VCC
NC
39F040
39F020
39F010
NC
A17
A17
39F010
39F020
39F040
A7 A6 A5 A4 A3 A2 A1 A0 I/O0
A7 A6 A5 A4 A3 A2 A1 A0 I/O0
A7 A6 A5 A4 A3 A2 A1 A0 I/O0
5 6 7 8 9 10 11 12 13 14
39F010
4
3
2
1
32
31
30
29 28 27 26 25 24 23 22 21
A14 A13 A8 A9 A11 OE# A10 CE# I/O7
A14 A13 A8 A9 A11 OE# A10 CE# I/O7
A14 A13 A8 A9 A11 OE# A10 CE# I/O7
15
16
17
18
19
20
I/O3
I/O4
I/O5 I/O5 I/O5
I/O1
39F020
GND
I/O2
I/O3
I/O1
39F040
GND
I/O2
I/O4
I/O1
I/O3
GND
I/O2
32-Pin PLCC
39F040
39F020
39F010
I/O4
I/O6
I/O6
I/O6
39F010
39F020
39F040
A11 A9 A8 A13 A14 A17 WE# V CC A18 A16 A15 A12 A7 A6 A5 A4
A11 A9 A8 A13 A14 A17 WE# V CC NC A16 A15 A12 A7 A6 A5 A4
A11 A9 A8 A13 A14 NC WE# V CC NC A16 A15 A12 A7 A6 A5 A4
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
OE# A10 CE# I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3
OE# A10 CE# I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3
OE# A10 CE# I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3
32-Pin VSOP
Programmable Microelectronics Corp.
2
Issue Date: March, 2004, Rev: 1.3
PMC
CONNECTION DIAGRAMS (CONTINUED)
PM39F010 / Pm39F020 / Pm39F040
39F040
39F020
39F010
39F010
39F020
39F040
A18 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND
NC A16 A15 A12 A7 A6 A5 A4 A3
NC A16 A15 A12 A7 A6 A5 A4 A3
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
A2 A2 A1 A1 A0 A0 I/O0 I/O0 I/O1 I/O1 I/O2 I/O2 GND GND
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
V CC WE# NC A14 A13 A8 A9 A11 OE# A10 CE# I/O7 I/O6 I/O5 I/O4 I/O3
V CC WE# A17 A14 A13 A8 A9 A11 OE# A10 CE# I/O7 I/O6 I/O5 I/O4 I/O3
V CC WE# A17 A14 A13 A8 A9 A11 OE# A10 CE# I/O7 I/O6 I/O5 I/O4 I/O3
32-Pin PDIP
LOGIC SYMBOL
A0-AMS 8 I/O0-I/O7 CE# OE# WE#
Note: AMS is the most significant address where AMS = A16 for PM39F010, A17 for Pm39F020, and A18 for Pm39F040.
Programmable Microelectronics Corp.
3
Issue Date: March, 2004, Rev: 1.3
PMC
PRODUCT ORDERING INFORMATION
Pm39F0x0 -70 J C E
PM39F010 / Pm39F020 / Pm39F040
Environmental Attribute E = Lead-free (Pb-free) Package Blank = Standard Package Temperature Range C = Commercial (0C to +85C) Package Type J = 32-pin Plastic J-Leaded Chip Carrier (32J) V = 32-pin Thin Small Outline Package (32V) P = 32-pin Plastic DIP (32P) Speed Option - 70 = 70ns - 55 = 55ns PMC Device Number PM39F010 (1 Mbit) Pm39F020 (2 Mbit) Pm39F040 (4 Mbit)
Programmable Microelectronics Corp.
4
Issue Date: March, 2004, Rev: 1.3
PMC
PM39F010 / Pm39F020 / Pm39F040
Part Number
PM39F010-55JCE PM39F010-55PCE PM39F010-55VCE PM39F010-70JCE
tACC(ns)
Package
32J
Temperature Range
55
32P 32V 32J
PM39F010-70JC PM39F010-70PCE 70 PM39F010-70PC PM39F010-70VCE 32V PM39F010-70VC Pm39F020-55JCE Pm39F020-55PCE Pm39F020-55VCE Pm39F020-70JCE 32J Pm39F020-70JC Pm39F020-70PCE 70 Pm39F020-70PC Pm39F020-70VCE 32V Pm39F020-70VC Pm39F040-55JCE Pm39F040-55PCE Pm39F040-55VCE Pm39F040-70JCE 32J Pm39F040-70JC Pm39F040-70PCE 70 Pm39F040-70PC Pm39F040-70VCE 32V Pm39F040-70VC 32P 55 32J 32P 32V 32P Commercial (0oC to + 85oC) 55 32J 32P 32V 32P
Programmable Microelectronics Corp.
5
Issue Date: March, 2004, Rev: 1.3
PMC
PIN DESCRIPTIONS
PM39F010 / Pm39F020 / Pm39F040
SYMBOL A0 - AMS(1)
TYPE INPUT
DESCRIPTION Address Inputs: For memory addresses input. Addresses are internally latched on the falling edge of WE# during a write cycle. Chip Enable: CE# goes low activates the device's internal circuitries for device operation. CE# goes high deselects the device and switches into standby mode to reduce the power consumption. Write Enable: Activate the device for write operation. WE# is active low. Output Enable: Control the device's output buffers during a read cycle. OE# is active low. Data Inputs/Outputs: Input command/data during a write cycle or output data during a read cycle. The I/O pins float to tri-state when OE# are disabled. Device Power Supply Ground No Connection
C E#
INPUT
WE# OE# I/O0 - I/O7 V CC GND NC
Note:
INPUT INPUT INPUT/ OUTPUT
1. AMS is the most significant address where AMS = A16 for PM39F010, A17 for Pm39F020, and A18 for Pm39F040.
Programmable Microelectronics Corp.
6
Issue Date: March, 2004, Rev: 1.3
PMC
BLOCK DIAGRAM
PM39F010 / Pm39F020 / Pm39F040
ERASE/PROGRAM VOLTAGE GENERATOR
I/O0-I/O7 I/O BUFFERS
HIGH VOLTAGE SWITCH
WE# CE# OE#
COMMAND REGISTER
CE,OE LOGIC
DATA LATCH
SENSE AMP
ADDRESS LATCH
Y-DECODER X-DECODER
Y-GATING MEMORY ARRAY
A0-A M S
DEVICE OPERATION
READ OPERATION The access of PM39F010/020/040 are similar to EPROM. To read data, three control functions must be satisfied: * CE# is the chip enable and should be pulled low ( VIL ). * OE# is the output enable and should be pulled low ( VIL). * WE# is the write enable and should remains high ( VIH ). PRODUCT IDENTIFICATION The product identification mode can be used to identify the manufacturer and the device through hardware or software read ID operation. See Table 1 for PMC Manufacturer ID and Device ID. The hardware ID mode is activated by applying a 12.0 Volt on A9 pin, typically used by an external programmer for selecting the right programming algorithm for the devices. Refer to Table 2 for Bus Operation Modes. The software ID mode is activated by a three-bus-cycle command. See Table 3 for Software Command Definition.
Programmable Microelectronics Corp.
BYTE PROGRAMMING The programming is a four-bus-cycle operation and the data is programmed into the devices (to a logical "0") on a byte-by-byte basis. See Table 3 for Software Command Definition. A program operation is activated by writing the three-byte command sequence followed by program address and one byte of program data into the devices. The addresses are latched on the falling edge of WE# or CE# whichever occurs later, and the data are latched on the rising edge of WE# or CE# whichever occurs first. The internal control logic automatically handles the internal programming voltages and timing. A data "0" can not be programmed back to a "1". Only erase operation can convert the "0"s to "1"s. The Data# Polling on I/O7 or Toggle Bit on I/O6 can be used to detect the progress or completion of a program cycle.
7
Issue Date: March, 2004, Rev: 1.3
PMC
DEVICE OPERATION (CONTINUED)
CHIP ERASE The entire memory array can be erased through a chip erase operation. Pre-programs the devices are not required prior to a chip erase operation. Chip erase starts immediately after a six-bus-cycle chip erase command sequence. All commands will be ignored once the chip erase operation has started. The devices will return to standby mode after the completion of chip erase. SECTOR AND BLOCK ERASE The memory array of PM39F010/020/040 are organized into uniform 4 Kbyte sectors. A sector erase operation allows to erase any individual sector without affecting the data in others. The memory array of those devices are also organized into uniform 64 Kbyte blocks (sector group - consists of sixteen adjacent sectors). A block erase operation allows to erase any individual block. The sector or block erase operation is similar to chip erase. I/O7 DATA# POLLING The PM39F010/020/040 provide a Data# Polling feature to indicate the progress or completion of a program and erase cycles. During a program cycle, an attempt to read the devices will result in the complement of the last loaded data on I/O7. Once the program operation is completed, the true data of the last loaded data is valid on all outputs. During a sector, block, or chip erase cycle, an attempt to read the device will result a "0" on I/O7. After the erase operation is completed, an attempt to read the device will result a "1" on I/O7. I/O6 TOGGLE BIT The PM39F010/020/040 also provide a Toggle Bit feature to detect the progress or completion of a program and erase cycles. During a program or erase cycle, an attempt to read data from the device will result a toggling between "1" and "0" on I/O6. When the program or erase operation is complete, I/O6 will stop toggling and valid data will be read. Toggle bit may be accessed at any time during a program or erase cycle.
PM39F010 / Pm39F020 / Pm39F040
HARDWARE DATA PROTECTION Hardware data protection protects the devices from unintentional erase or program operation. It is performed in the following ways: (a) VCC sense: if VCC is below 3.8 V (typical), the write operation is inhibited. (b) Write inhibit: holding any of the signal OE# low, CE# high, or WE# high inhibits a write cycle. (c) Noise filter: pulses of less than 5 ns (typical) on the WE# or CE# input will not initiate a write operation.
Table 1. Product Identification
Product Identification Manufacturer ID Device ID: PM39F010 Pm39F020 Pm39F040 1C h 4D h 4E h Data 9D h
Programmable Microelectronics Corp.
8
Issue Date: March, 2004, Rev: 1.3
PMC
SECTOR/BLOCK ADDRESS TABLE
Block Siz e (Kbytes)
PM39F010 / Pm39F020 / Pm39F040
Memory Density
Block
(1)
Sector Sector 0 Sector 1
Sector Siz e (Kbytes) 4 4
Address Range 00000h - 00F F F h 01000h - 01F F F h
Block 0
64
:
Sector 15 1 Mbit Sector 16 2 Mbit Block 1 4 Mbit Block 2 Block 3 Block 4 Block 5 Block 6 Block 7 64 64 64 64 64 64 64 Sector 17
:
4 4 4
:
0F 000h - 0F F F F h 10000h - 10F F F h 11000h - 11FFFh
:
Sector 31
:
4
:
1F 000h - 1F F F F h 20000h - 2F F F F h 30000h - 3F F F F h 40000h - 4F F F F h 50000h - 5F F F F h 60000h - 6F F F F h 70000h - 7F F F F h
" " " " " "
" " " " " "
Note: 1. A Block is a 64 Kbyte sector group which consists of sixteen adjecent sectors of 4 Kbyte each.
Programmable Microelectronics Corp.
9
Issue Date: March, 2004, Rev: 1.3
PMC
OPERATING MODES
PM39F010 / Pm39F020 / Pm39F040
Table 2. Bus Operation Modes
Mode Read Write Standby Output Disable
CE# VIL VIL VIH X
OE# VIL VIH X VIH
WE# VIH VIL X X
ADDRESS X
(1)
I/O DOUT DIN High Z High Z Manufacturer ID
X X X A2 - AMS (2) = X, A9 = VH (3), A1 = VIL, A0 = VIL A2 - AMS (2) = X, A9 = VH (3), A1 = VIL, A0 = VIH
3. VH = 12.0 V 0.5 V.
Product Identification Hardware
VIL
VIL
VIH
Device ID
Notes: 1. X can be VIL, VIH or addresses. 2. AMS = Most significant address; AMS = A16 for PM39F010, A17 for Pm39F020, and A18 for Pm39F040.
COMMAND DEFINITION
Table 3. Software Command Definition
1st B u s C ycle Addr D ata Addr D OUT 555h A A h 555h A A h 555h A A h 555h A A h 555h A A h 555h A A h X X X h F 0h 2A A h 55h 2A A h 55h 2A A h 55h 2A A h 55h 2A A h 55h 2A A h 55h 555h 80h 555h 80h 555h 80h 555h A 0h 555h 90h 555h F 0h 555h A A h 555h A A h 555h A A h Addr D IN 2A A h 55h 2A A h 55h 2A A h 55h 555h 10h SA (1) 30h BA (2) 50h 2n d B u s C ycle Addr D ata 3rd B us C ycle Addr D ata 4th B us C ycle Addr D ata 5th B us C ylce Addr D ata 6th B us C ycle Addr D ata
C ommand S eq u en ce Read C hi p Erase Sector Erase Block Erase Byte Program Product ID Entry Product ID Exi t (3) Product ID Exi t (3)
B us C ycle 1 6 6 6 4 3 3 1
Notes: 1. SA = Sector address of the sector to be erased. 2. BA = Block address of the block to be erased. 3. Either one of the Product ID Exit command can be used.
Programmable Microelectronics Corp.
10
Issue Date: March, 2004, Rev: 1.3
PMC
DEVICE OPERATIONS FLOWCHARTS
AUTOMATIC PROGRAMMING
PM39F010 / Pm39F020 / Pm39F040
Start
Load Data AAh to Address 555H
Load Data 55h to Address 2AAh
Address Increment
Load Data A0h to Address 555h
Load Program Data to Program Address
I/O7 = Data? or I/O6 Stop Toggle?
No
Yes
Last Address? No Yes Programming Completed
Chart 1. Automatic Programming Flowchart
Programmable Microelectronics Corp.
11
Issue Date: March, 2004, Rev: 1.3
PMC
DEVICE OPERATIONS FLOWCHARTS (CONTINUED)
AUTOMATIC ERASE
Start
PM39F010 / Pm39F020 / Pm39F040
Write Sector, Block, or Chip Erase Command
No
Data = FFh? or I/O6 Stop Toggle? Yes Erasure Completed
CHIP ERASE COMMAND
Load Data AAh to Address 555h
SECTOR ERASE COMMAND
Load Data AAh to Address 555h
BLOCK ERASE COMMAND
Load Data AAh to Address 555h
Load Data 55h to Address 2AAh
Load Data 55h to Address 2AAh
Load Data 55h to Address 2AAh
Load Data 80h to Address 555h
Load Data 80h to Address 555h
Load Data 80h to Address 555h
Load Data AAh to Address 555h
Load Data AAh to Address 555h
Load Data AAh to Address 555h
Load Data 55h to Address 2AAh
Load Data 55h to Address 2AAh
Load Data 55h to Address 2AAh
Load Data 10h to Address 555h
Load Data 30h to SA
Load Data 50h to BA
Chart 2. Automatic Erase Flowchart
Programmable Microelectronics Corp.
12
Issue Date: March, 2004, Rev: 1.3
PMC
DEVICE OPERATIONS FLOWCHARTS (CONTINUED)
SOFTWARE PRODUCT IDENTIFICATION ENTRY
PM39F010 / Pm39F020 / Pm39F040
SOFTWARE PRODUCT IDENTIFICATION EXIT
Load Data AAh to Address 555h
Load Data AAh to Address 555h
Load Data 55h to Address 2AAh
Load Data 55h to Address 2AAh or
Load Data F0h to Address XXXh
Load Data 90h to Address 555h
Load Data F0h to Address 555h
Exit Product Identification M o d e (3)
Enter Product Identification M o d e (1,2)
Exit Product Identification M o d e (3)
Notes: 1. The device will enter Product Identification mode after excuting the Product ID Entry command. 2. Under Product Identification mode, the Manufacturer ID and Device ID of devices can be read at address X0000h and X0001h where X = Don't Care. 3. The device returns to standby operation.
Chart 3. Software Product Identification Entry/Exit Flowchart
Programmable Microelectronics Corp.
13
Issue Date: March, 2004, Rev: 1.3
PMC
ABSOLUTE MAXIMUM RATINGS (1)
Temperature Under Bias Storage Temperature
PM39F010 / Pm39F020 / Pm39F040
-65oC to +125oC -65oC to +125oC Standard Package 240oC 3 Seconds 260oC 3 Seconds -0.5 V to +6.25 V -0.5 V to +13.0 V -0.5 V to V CC + 0.6 V -0.5 V to +6.25 V
Surface Mount Lead Soldering Temperature Lead-free Package Input Voltage with Respect to Ground on All Pins except A9 pin(2) Input Voltage with Respect to Ground on A9 pin(3) All Output Voltage with Respect to Ground V CC (2)
Notes: 1. Stresses under those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. The functional operation of the device or any other conditions under those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating condition for extended periods may affected device reliability. 2. Maximum DC voltage on input or I/O pins are +6.25 V. During voltage transitioning period, input or I/O pins may overshoot to VCC + 2.0 V for a period of time up to 20 ns. Minimum DC voltage on input or I/O pins are 0.5 V. During voltage transitioning period, input or I/O pins may undershoot GND to -2.0 V for a period of time up to 20 ns. 3. Maximum DC voltage on A9 pin is +13.0 V. During voltage transitioning period, A9 pin may overshoot to +14. 0 V for a period of time up to 20 ns. Minimum DC voltage on A9 pin is -0.5 V. During voltage transitioning period, A9 pin may undershoot GND to -2.0 V for a period of time up to 20 ns.
DC AND AC OPERATING RANGE
Part Number Operating Temperature Vcc Power Supply PM39F010/020/040 0oC to 85oC 4.5 V - 5.5 V
Programmable Microelectronics Corp.
14
Issue Date: March, 2004, Rev: 1.3
PMC
DC CHARACTERISTICS
Symbol ILI ILO ISB1 ISB2 ICC1 ICC2(1) VIL VIH VOL VOH Parameter Input Load Current Output Leakage Current
PM39F010 / Pm39F020 / Pm39F040
Condition VIN= 0 V to V CC VI/O = 0 V to V CC
Min
Typ
Max +1 +1
Units A A A mA mA mA V V V V
VCC Standby Current CMOS CE#, OE# = V CC ?0.5 V VCC Standby Current TTL VCC Active Read Current VCC Program/Erase Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage IOL = 5.8 mA; V CC = V CCmin IOH = -400 A; V CC = V CC min -0.5 2.0 CE# = V IH to V CC f = 5 MHz; IOUT= 0 mA
0.5 0.2 8 9
10 3 20 20 0.8 VCC + 0.5 0.45
2.4
Note: 1. Characterized but not 100% tested.
AC CHARACTERISTICS
READ OPERATIONS CHARACTERISTICS
PM39F010-55 Pm39F020-55 Pm39F040-55 PM39F010-70 Pm39F020-70 Pm39F040-70
Symbol
Parameter
Units
Min tRC tACC tCE tOE tDF tOH tVCS Read Cycle Time Address to Output Delay CE# to Output Delay OE# to Output Delay CE# or OE# to Output High Z Output Hold from OE#, CE# or Address, whichever occured first V CC Set-up Time 0 0 50 55
Max
Min 70
Max ns 70 70 35 ns ns ns ns ns s
55 55 25 15 0 0 50
25
Programmable Microelectronics Corp.
15
Issue Date: March, 2004, Rev: 1.3
PMC
AC CHARACTERISTICS (CONTINUED)
READ OPERATIONS AC WAVEFORMS
PM39F010 / Pm39F020 / Pm39F040
t RC
ADDRESS ADDRESS VALID
t ACC
CE#
t CE t OE t DF
OE#
WE#
tO H
OUTPUT HIGH Z
OUTPUT VALID
t VCS
VCC
OUTPUT TEST LOAD
5.0 V
INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL
1.8 K OUTPUT PIN
3.0 V Input 0.0 V 1.5 V
AC Measurement Level
1.3 K
C L = 30 pF
PIN CAPACITANCE ( f = 1 MHz, T = 25C )
Typ CIN C OUT 4 8
Max 6 12
Units pF pF
Conditions VIN = 0 V VOUT = 0 V
Note: These parameters are characterized but not 100% tested.
Programmable Microelectronics Corp.
16
Issue Date: March, 2004, Rev: 1.3
PMC
AC CHARACTERISTICS (CONTINUED)
PM39F010 / Pm39F020 / Pm39F040
WRITE (PROGRAM/ERASE) OPERATIONS CHARACTERISTICS
PM39F010-55 Pm39F020-55 Pm39F040-55 PM39F010-70 Pm39F020-70 Pm39F040-70
Symbol
Parameter
Units
Min tWC tAS tAH tCS tCH tOEH tDS tDH tWP tWPH tBP tEC tVCS Write Cycle Time Address Set-up Time Address Hold Time CE# and WE# Set-up Time CE# and WE# Hold Time OE# High Hold Time Data Set-up Time Data Hold Time Write Pulse Width Write Pulse Width High Byte Programming Time Chip or Block Erase Time VCC Set-up Time 50 55 0 30 0 0 10 30 0 30 20
Max
Min 70 0 30 0 0 10 30 0 35 20
Max ns ns ns ns ns ns ns ns ns ns 30 100 s ms s
30 100 50
PROGRAM OPERATIONS AC WAVEFORMS - WE# CONTROLLED
Program Cycle OE#
tV C S
CE#
tC H
tC S
WE#
tW P
tW P H
tB P
tA S
A0 - A M S 555
tA H
2AA 555 ADDRESS
tW C
DATA IN AA
tD S
55
tD H
A0
INPUT DATA VALID DATA
V CC
Programmable Microelectronics Corp.
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Issue Date: March, 2004, Rev: 1.3
PMC
AC CHARACTERISTICS (CONTINUED)
PM39F010 / Pm39F020 / Pm39F040
PROGRAM OPERATIONS AC WAVEFORMS - CE# CONTROLLED
Program Cycle OE#
tV C S
WE#
tC H
tC S
CE#
tW P
tW P H
tB P
tA S
A0 - A M S
tA H
555 2AA 555 ADDRESS
tW C
DATA IN AA
tD S
55
tD H
A0
INPUT DATA VALID DATA
V CC
CHIP ERASE OPERATIONS AC WAVEFORMS
OE#
tV C S
CE#
tW P
WE#
tW P H tD H
tA S
AO - A M S
tA H
555 tW C AA 2AA
555
555
2AA
555
tD S
55 80 AA 55 10
tE C
DATA IN
V CC
Programmable Microelectronics Corp.
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Issue Date: March, 2004, Rev: 1.3
PMC
AC CHARACTERISTICS (CONTINUED)
PM39F010 / Pm39F020 / Pm39F040
SECTOR OR BLOCK ERASE OPERATIONS AC WAVEFORMS
OE#
tV C S
CE#
tW P
WE#
tW P H tD H
tA S
AO - A M S
tA H
555 tW C AA 2AA
555
555
2AA
Sector or Block Address
tD S
55 80 AA 55 30 or 50
tE C
DATA IN
V CC
TOGGLE BIT AC WAVEFORMS
WE#
CE#
tO E H
OE#
tO E
I/O6
DATA TOGGLE TOGGLE STOP TOGGLING
tD F tO H
VALID DATA
Note: Toggling CE#, OE#, or both OE# and CE# will operate Toggle Bit.
Programmable Microelectronics Corp.
19
Issue Date: March, 2004, Rev: 1.3
PMC
AC CHARACTERISTICS (CONTINUED)
DATA# POLLING AC WAVEFORMS
PM39F010 / Pm39F020 / Pm39F040
WE# CE#
t CH t OEH
t CE
OE#
t OE tO H
I/O7 I/O7# VALID DATA
t DF
Note: Toggling CE#, OE#, or both OE# and CE# will operate Data# Polling.
PROGRAM/ERASE PERFORMANCE
Parameter Sector Erase Time Block Erase Time Chip Erase Time Byte Programming Time Unit ms ms ms s Typ 55 55 55 16 Max 100 100 100 30 Remarks From writing erase command to erase completion From writing erase command to erase completion From writing erase command to erase completion Excludes the time of four-cycle program command execution
Note: These parameters are characterized but not 100% tested.
RELIABILITY CHARACTERISTICS (1)
Parameter Endurance Data Retention ESD - Human Body Model ESD - Machine Model Latch-Up Min 100,000 20 2,000 200 100 + ICC1
(2)
Typ
Unit Cycles Years Volts Volts mA
Test Method JEDEC Standard A117 JEDEC Standard A103 JEDEC Standard A114 JEDEC Standard A115 JEDEC Standard 78
Note: 1. These parameters are characterized but not 100% tested. 2. Preliminary specification only and will be formalized after cycling qualification test.
Programmable Microelectronics Corp.
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Issue Date: March, 2004, Rev: 1.3
PMC
PACKAGE TYPE INFORMATION 32J
PM39F010 / Pm39F020 / Pm39F040
32-Pin Plastic Leaded Chip Carrier Dimensions in Inches (Millimeters)
12.57 12.32
11.51 11.35
15.11 14.86 Pin 1 I.D. 14.05 13.89
SEATING PLANE
0.74X30 3.56 3.18 2.41 1.93
13.46 12.45 0.53 0.33
0.81 0.66
1.27 Typ.
32P
32-Pin Plastic DIP Dimensions in Inches (Millimeters)
1.655 1.645 32 17 .550 .530 Pin 1 I.D. 16 .005 MIN
0 10 .665 .625 .012 .008
.625 .600
.065 .040 .200 .170
SEATING PLANE .150 .120 .110 .090 .022 .016 .050 .015
Programmable Microelectronics Corp.
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Issue Date: March, 2004, Rev: 1.3
PMC
PM39F010 / Pm39F020 / Pm39F040
PACKAGE TYPE INFORMATION (CONTINUED) 32V
32-Pin Thin Small Outline Package (TSOP 8mm x 14mm)(Millimeters)
1.05 0.95 Pin 1 I.D. 0.27 0.17
8.10 7.90 0.50 BSC 0.15 0.05
12.50 12.30 14.20 13.80
1.20 MAX 0.25 0 5
0.20 0.10
0.70 0.50
Programmable Microelectronics Corp.
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Issue Date: March, 2004, Rev: 1.3
PMC
REVISION HISTORY
D ate March, 2003 August, 2003 R evision N o. 1.0 1.1
PM39F010 / Pm39F020 / Pm39F040
D escription of C hanges Preli mi nary Informati on Removed 90 ns read speed grade and formal release; fi xed typo on p.6 Added Lead-free package opti ons Upgraded guranteed program/erase cycles from 50,000 to 100,000 (preli mi nary) Revi sed output test load to 30 pF for all speed Revi sed typo on package di mensi on i nformati on
P ag e N o . All 1,4,14,15,16 1, 4, 13 1, 19 15 20, 21 All
D ecember, 2003
1.2
March, 2004
1.3
Extend the operati on range of temperature
Programmable Microelectronics Corp.
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Issue Date: March, 2004, Rev: 1.3


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